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1

Growth of 6H and 4H–SiC by sublimation epitaxy

M. Syväjärvi, R. Yakimova, M. Tuominen, A. Kakanakova-Georgieva, M.F. MacMillan, A. Henry, Q. Wahab, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 523 KB

english, 1999

2

Sublimation epitaxy of AlN on SiC: growth morphology and structural features

A. Kakanakova-Georgieva, P.O.Å. Persson, R. Yakimova, L. Hultman, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 339 KB

english, 2004

3

Sublimation growth of AlN crystals: Growth mode and structure evolution

R. Yakimova, A. Kakanakova-Georgieva, G.R. Yazdi, G.K. Gueorguiev, M. Syväjärvi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 319 KB

english, 2005

4

Growth of silicon carbide: process-related defects

R. Yakimova, M. Syväjarvi, T. Iakimov, H. Jacobsson, A. Kakanakova-Georgieva, P. Råback, E. Janzén

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 611 KB

english, 2001

5

Defects in hexagonal-AlN sheets by first-principles calculations

E. F. de Almeida, F. de Brito Mota, C. M. C. de Castilho, A. Kakanakova-Georgieva, G. K. Gueorguiev

Journal:

The European Physical Journal B / Condensed Matter and Complex Systems

Year:

2012

Language:

english

File:

PDF, 1.73 MB

english, 2012

6

Stress related morphological defects in SiC epitaxial layers

Yakimova, R, Syväjärvi, M, Kakanakova-Georgieva, A, Janzén, E

Journal:

Diamond and Related Materials

Year:

2001

Language:

english

File:

PDF, 650 KB

english, 2001

7

Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

Nilsson, D., Janzén, E., Kakanakova-Georgieva, A.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.78 MB

english, 2014

8

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

Kakanakova-Georgieva, A., Nilsson, D., Trinh, X. T., Forsberg, U., Son, N. T., Janzén, E.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 908 KB

english, 2013

9

Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Yakimova, Rositza, Jacobsson, Henrik, Syväjärvi, Mikael, Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, Charíya, Johansson, Leif I., Janzén, Erik

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 438 KB

2002

10

Stable and metastable Si negative-U centers in AlGaN and AlN

Trinh, Xuan Thang, Nilsson, Daniel, Ivanov, Ivan G., Janzén, Erik, Kakanakova-Georgieva, Anelia, Son, Nguyen Tien

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 564 KB

english, 2014

11

Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties

dos Santos, Renato B, Mota, F de Brito, Rivelino, R, Kakanakova-Georgieva, A, Gueorguiev, G K

Journal:

Year:

2016

Language:

english

File:

PDF, 1.75 MB

english, 2016

12

Defect Evolution in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers with Reduced Micropipe Density

Yakimova, R., Syväjärvi, M., Jacobsson, H., Kakanakova-Georgieva, A., Tuomi, T., Rendakova, S., Dmitriev, V., Janzén, E.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 2.91 MB

english, 2000

13

Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene

Sangiovanni, D. G., Gueorguiev, G. K., Kakanakova-Georgieva, A.

Journal:

Physical Chemistry Chemical Physics

Year:

2018

Language:

english

File:

PDF, 8.10 MB

english, 2018

14

[IEEE 2019 4th International Conference on Smart and Sustainable Technologies (SpliTech) - Split, Croatia (2019.6.18-2019.6.21)] 2019 4th International Conference on Smart and Sustainable Technologies (SpliTech) - An mHealth application for female fertility assistance

Shopov, Mitko, Kakanakova, Irina, Kakanakov, Nikolay, Mateev, Borislav

Year:

2019

File:

PDF, 282 KB

2019

15

Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation

A. Kakanakova-Georgieva, E. P. Trifonova, R. Yakimova, M. F. MacMillan, E. Janzen

Journal:

Crystal Research and Technology

Year:

1999

Language:

english

File:

PDF, 61 KB

english, 1999

16

AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations

A. Kakanakova-Georgieva, G.K. Gueorguiev, S. Stafström, L. Hultman, E. Janzén

Journal:

Chemical Physics Letters

Year:

2006

Language:

english

File:

PDF, 265 KB

english, 2006

17

Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures

A. Kakanakova-Georgieva, U. Forsberg, I.G. Ivanov, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 519 KB

english, 2007

18

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova-Georgieva, E. Janzen, D. Gogova, B. Monemar, M. Heuken

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 210 KB

english, 2007

19

A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD

M. Syväjärvi, A. Kakanakova-Georgieva, G.R. Yazdi, A. Karar, U. Forsberg, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 967 KB

english, 2007

20

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Urban Forsberg, A. Lundskog, A. Kakanakova-Georgieva, R. Ciechonski, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 364 KB

english, 2009

21

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

R.J.T. Simms, M.J. Uren, T. Martin, J. Powell, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, E. Janzén, M. Kuball

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 353 KB

english, 2011

22

Low-pressure sublimation epitaxy of AlN films—growth and characterization

M. Beshkova, Z. Zakhariev, M.V. Abrashev, E. Birch, A. Kakanakova, R. Yakimova

Journal:

Year:

2004

Language:

english

File:

PDF, 196 KB

english, 2004

23

Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy

M. Syväjärvi, R. Yakimova, A. Kakanakova–Georgieva, S.G. Sridhara, M.K. Linnarsson, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 159 KB

english, 2002

24

Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

A. Kakanakova-Georgieva, R. Yakimova, G.K. Gueorguiev, M.K. Linnarsson, M. Syväjärvi, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

25

Investigation of domain evolution in sublimation epitaxy of SiC

M. Tuominen, R. Yakimova, A. Kakanakova-Georgieva, M.F. MacMillan, M. Syväjärvi, E. Janzén

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 290 KB

english, 1998

26

Depth dependence of photoluminescence and chemical bonding in porous silicon

M Sendova-Vassileva, D Dimova-Malinovska, M Kamenova, A Kakanakova-Georgieva, Ts Marinova

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 103 KB

english, 1998

27

XPS characterization of tungsten-based contact layers on 4H–SiC

A Kakanakova-Georgieva, Ts Marinova, O Noblanc, C Arnodo, S Cassette, C Brylinski

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 216 KB

english, 1999

28

FeSi2 thin films investigated by X-ray photoelectron and infrared spectroscopy

A Toneva, E Goranova, G Beshkov, Tsv Marinova, A Kakanakova-Georgieva

Journal:

Year:

2000

Language:

english

File:

PDF, 188 KB

english, 2000

29

Behavior of background impurities in thick 4H–SiC epitaxial layers

A. Kakanakova-Georgieva, R. Yakimova, M. Syväjärvi, E. Janzén

Journal:

Applied Surface Science

Year:

2001

Language:

english

File:

PDF, 220 KB

english, 2001

30

XPS depth profiling of laser-annealed Zn+-implanted GaAs

Ts Marinova, A Kakanakova-Georgieva, M Kalitzova, G Vitali, C Pizzuto, G Zollo

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 288 KB

english, 1997

31

Interface chemistry of WN/4H–SiC structures

A Kakanakova-Georgieva, L Kassamakova, Ts Marinova, R Kakanakov, O Noblanc, C Arnodo, S Cassette, C Brylinski

Journal:

Applied Surface Science

Year:

1999

Language:

english

File:

PDF, 315 KB

english, 1999

32

Nickel based ohmic contacts on SiC

Ts. Marinova, A. Kakanakova-Georgieva, V. Krastev, R. Kakanakov, M. Neshev, L. Kassamakova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pecz, G. Radnoczi, Gy. Vincze

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 413 KB

english, 1997

33

Structural properties of 6H-SiC epilayers grown by two different techniques

A. Kakanakova-Georgieva, T. Paskova, R. Yakimova, C. Hallin, M. Syväjärvi, E.P. Trifonova, M. Surtchev, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 357 KB

english, 1997

34

Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

M. Syväjärvi, R. Yakimova, A. Kakanakova-Georgieva, M.F. MacMillan, E. Janzén

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 258 KB

english, 1999

35

Study of the electrical, thermal and chemical properties of Pd ohmic contacts to p-type 4H-SiC: dependence on annealing conditions

L Kassamakova, R Kakanakov, N Nordell, S Savage, A Kakanakova-Georgieva, Ts Marinova

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

36

Deep levels in 4H-SiC layers grown by sublimation epitaxy

M. Syväjärvi, R. Yakimova, R.R. Ciechonski, A. Kakanakova-Georgieva, L. Storasta, E. Janzén

Journal:

Optical Materials

Year:

2003

Language:

english

File:

PDF, 156 KB

english, 2003

37

Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

A. Kakanakova-Georgieva, I. G. Ivanov, C. Hallin, E. Janzén

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 145 KB

english, 2005

38

Carbon-tuned cathodoluminescence of semi-insulating GaN

A. Kakanakova-Georgieva, U. Forsberg, E. Janzén

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 177 KB

english, 2011

39

Epitaxial Growth of AlN Layers on SiC Substrates in a Hot-Wall MOCVD System

A. Kakanakova-Georgieva, P.O.Å. Persson, U. Forsberg, J. Birch, L. Hultman, E. Janzén

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 136 KB

english, 2003

40

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

K. Jarašiūnas, T. Malinauskas, A. Kadys, R. Aleksiejūnas, M. Sūdžius, S. Miasojedovas, S. Juršenas, A. Žukauskas, D. Gogova, A. Kakanakova-Georgieva, E. Janzén, H. Larsson, B. Monemar, P. Gibart, B. B

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 217 KB

english, 2005

41

Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

A. Kakanakova-Georgieva, A. Kasic, C. Hallin, B. Monemar, E. Janzén

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 163 KB

english, 2005

42

High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

C. Hallin, A. Kakanakova-Georgieva, P. Persson, E. Janzén

Journal:

physica status solidi (c)

Year:

2005

Language:

english

File:

PDF, 351 KB

english, 2005

43

Effect of boron on the resistivity of compensated 4H-SiC

R. R. Ciechonski, M. Syväjärvi, A. Kakanakova-Georgieva, R. Yakimova

Journal:

Journal of Electronic Materials

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

44

Structural impact of LPE buffer layer on sublimation grown 4H–SiC epilayers

H. Jacobson, R. Yakimova, M. Syväjärvi, A. Kakanakova-Georgieva, T. Tuomi, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 337 KB

english, 2003

45

Interface chemistry of a Ti/Au/Pt/Ti/SiC structure

A. Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

46

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

A. Kakanakova-Georgieva, D. Nilsson, M. Stattin, U. Forsberg, Å. Haglund, A. Larsson, E. Janzén

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2010

Language:

english

File:

PDF, 189 KB

english, 2010

47

Characterization of ohmic and Schottky contacts on SiC

A. Kakanakova-Georgieva, Ts. Marinova, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski

Journal:

Thin Solid Films

Year:

1999

Language:

english

File:

PDF, 486 KB

english, 1999

48

Electrochemical deposition of thin zirconia films on stainless steel 316 L

P Stefanov, D Stoychev, I Valov, A Kakanakova-Georgieva, Ts Marinova

Journal:

Materials Chemistry and Physics

Year:

2000

Language:

english

File:

PDF, 339 KB

english, 2000

49

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

A. Kakanakova-Georgieva, D. Nilsson, E. Janzén

Journal:

Journal of Crystal Growth

Year:

2012

Language:

english

File:

PDF, 683 KB

english, 2012

50

Optical Properties of Aluminium and Nitrogen in Compensated 4H-SiC Epitaxial Layers

Syväjärvi, Mikael, Yakimova, Rositza, Kakanakova-Georgieva, Anelia, Henry, Anne, Janzén, Erik, Linnarsson, Margareta K.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 58 KB

english, 2000